Journal article
Facile fabrication of an electrolyte-gated In2O3 nanoparticle-based thin-film transistor uniting laser ablation and inkjet printing
B Hassan, Y Liang, J Yong, Y Yu, K Ganesan, A Walla, R Evans, G Chana, B Nasr, E Skafidas
Flexible and Printed Electronics | IOP PUBLISHING LTD | Published : 2018
Abstract
We propose the inkjet printing of new thin-film transistors (TFTs) based upon a sodium alginate (NaAlg) electrolyte-gate and a new In2O3 nanoparticle ink in which the electrodes and channels were formed by laser ablation. Laser ablation improved the conductive ink channel resolution leading to a smaller channel length through low-temperature processing steps. The NaAlg based electrolyte and a thickness independent gate dielectric allow for an in-plane design resulting in relaxed manufacturing tolerance requirements and reduced processing steps/time. The fabricated TFT operates at a very low voltage (<1.5 V) with a measured field-effect mobility of 0.77 cm2 V-1 s-1 and an ON/OFF current ratio..
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Grants
Awarded by King Abdulaziz City for Science and Technology
Funding Acknowledgements
This work was supported by the Australian Research Council Centre of Excellence for Integrative Brain Function (ARC Centre Grant CE140100007). This work was partially performed at the Experimental Condensed Matter Physics (ECMP) department at the University of Melbourne and Micro-Nano Research Facility (MNRF) at RMIT University. This work was performed in part at the Materials Characterization and Fabrication Platform (MCFP) at the University of Melbourne. The authors would like to acknowledge Dr Kumaravelu Ganesan for assistance provided in cleanroom laboratory work. The first author acknowledges the support of King Abdulaziz City for Science and Technology (KACST).