Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter
Jamie S Laird, Yuan Chen, Tuan Vo, Larry Edmonds, Leif Scheick, Philippe Adell
IEEE Transactions on Nuclear Science | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Published : 2009
Spatially-resolved picosecond laser induced transients have been measured in a 0.18 μm CMOS inverter test structure as a function of temperature. Sensitive n-drain and p-drain nodes have been scaled in size to accommodate characteristic differences between ion and laser tracks. Images based on pulse characteristics have been collected from 325 K to 400 K and transient currents extracted from laser strikes to both the OFF drain and its surroundings. With increasing temperature strikes to the OFF drain result in a pulse width which appears to broadens whilst the charge collected surprisingly decreases. © 2006 IEEE.