Electronic Raman scattering as a probe for investigating interactions between impurities in silicon
N Stavrias, PG Spizzirri, S Prawer
JOURNAL OF RAMAN SPECTROSCOPY | WILEY | Published : 2019
Electronic Raman scattering (ERS) is investigated as a probe for interactions between impurities in silicon. We report ERS measurements of donors (P, Sb, and As) and acceptors (B) at various concentrations and measurements at various illumination wavelengths. The difference between above and below indirect band gap measurement is discussed in terms of the difficulties of using ERS as a localised probe. We extend the previous literature on impurity interactions of Si:P in the bulk to include Sb and B and demonstrate that the perturbation of the observed ERS transition energy resulting from wavefunction overlap of nearest neighbours is opposite for donors and acceptors. Finally, we model the m..View full abstract
This work was supported by the Australian Research Council Centre of Excellence for Quantum Computer Technology. NSwould like to thank B. C. Johnson for useful discussions.