Journal article
Dopant-Free Partial Rear Contacts Enabling 23% Silicon Solar Cells
J Bullock, Y Wan, M Hettick, X Zhaoran, SP Phang, D Yan, H Wang, W Ji, C Samundsett, Z Hameiri, D Macdonald, A Cuevas, A Javey
Advanced Energy Materials | WILEY-V C H VERLAG GMBH | Published : 2019
Abstract
Over the past five years, there has been a significant increase in both the intensity of research and the performance of crystalline silicon devices which utilize metal compounds to form carrier-selective heterocontacts. Such heterocontacts are less fundamentally limited and have the potential for lower costs compared to the current industry dominating heavily doped, directly metalized contacts. A low temperature (≤230 °C), TiO x /LiF x /Al electron heterocontact is presented here, which achieves mΩcm 2 scale contact resistivities ρ c on lowly doped n-type substrates. As an extreme demonstration of the potential of this heterocontact, it is trialed in a newly developed, high efficiency n-typ..
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Awarded by Office of Science
Funding Acknowledgements
Materials characterization was supported by the Electronic Materials Programs, funded by the Director, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the US Department of Energy under Contract No. DE-AC02-05CH11231. XPS characterization was performed at the Joint Center for Artificial Photosynthesis, supported through the Office of Science of the US Department of Energy under Award Number DE-SC0004993. Work at the Molecular Foundry was supported by the Office of Science, Office of Basic Energy Sciences, of the US Department of Energy (Contract No. DE-AC02-05CH11231).