Journal article

g-factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond

Golrokh Akhgar, Lothar Ley, Daniel L Creedon, Alastair Stacey, Jeffrey C McCallum, Alex R Hamilton, Christopher Pakes

PHYSICAL REVIEW B | AMER PHYSICAL SOC | Published : 2019

Abstract

The two-dimensional (2D) hole gas at the surface of transfer-doped diamond shows quantum-mechanical interference effects in magnetoresistance in the form of weak localization and weak antilocalization (WAL) at temperatures below about 5 K. Here we use the quenching of the WAL by an additional magnetic field applied parallel to the 2D plane to extract the magnitude of the in-plane g-factor of the holes and fluctuations in the well width as a function of carrier density. Carrier densities are varied between 1.71 and 4.35×1013cm-2 by gating a Hall bar device with an ionic liquid. Over this range, calculated values of |g| vary between 1.6 and 2.3 and the extracted well-width variation drops from..

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Grants

Awarded by Australian Research Council


Funding Acknowledgements

This work was supported by the Australian Research Council under the Discovery Project No. DP150101673.