Journal article

Giant, Anomalous Piezoimpedance in Silicon-on-insulator

H Li, CTK Lew, BC Johnson, JC McCallum, S Arscott, ACH Rowe

PHYSICAL REVIEW APPLIED | AMER PHYSICAL SOC | Published : 2019

Abstract

A giant, anomalous piezoresponse of fully depleted silicon-on-insulator devices under mechanical stress is demonstrated by impedance spectroscopy. This piezoresponse strongly depends on the measurement frequency, ω, and consists of both a piezoresistance (PZR) and a piezocapacitance, whose maximum values are -1100×10-11 and -900×10-11Pa-1, respectively. These values should be compared with the usual bulk PZR in p-type silicon, 70×10-11Pa-1. The observations are well described by models of space-charge-limited hole currents in the presence of fast electronic traps having stress-dependent capture rates (ωc) and emission rates. Under steady-state conditions (i.e., when ωωc), where the impedance..

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Grants

Awarded by French Agence Nationale de la Recherche


Funding Acknowledgements

This work was partially financed by the French Agence Nationale de la Recherche, Contract No. ANR-17-CE24-0005. The authors also thank the CNRS and the University of Melbourne for a travel grant (CNRS PRC "Spectromech").