Giant, Anomalous Piezoimpedance in Silicon-on-insulator
H Li, CTK Lew, BC Johnson, JC McCallum, S Arscott, ACH Rowe
PHYSICAL REVIEW APPLIED | AMER PHYSICAL SOC | Published : 2019
A giant, anomalous piezoresponse of fully depleted silicon-on-insulator devices under mechanical stress is demonstrated by impedance spectroscopy. This piezoresponse strongly depends on the measurement frequency, ω, and consists of both a piezoresistance (PZR) and a piezocapacitance, whose maximum values are -1100×10-11 and -900×10-11Pa-1, respectively. These values should be compared with the usual bulk PZR in p-type silicon, 70×10-11Pa-1. The observations are well described by models of space-charge-limited hole currents in the presence of fast electronic traps having stress-dependent capture rates (ωc) and emission rates. Under steady-state conditions (i.e., when ωωc), where the impedance..View full abstract
Awarded by French Agence Nationale de la Recherche
This work was partially financed by the French Agence Nationale de la Recherche, Contract No. ANR-17-CE24-0005. The authors also thank the CNRS and the University of Melbourne for a travel grant (CNRS PRC "Spectromech").