Photoluminescence properties of praseodymium ions implanted into submicron regions in gallium nitride
Shin-ichiro Sato, Manato Deki, Tohru Nakamura, Tomoaki Nishimura, Daniel Stavrevski, Andrew D Greentree, Brant C Gibson, Takeshi Ohshima
JAPANESE JOURNAL OF APPLIED PHYSICS | IOP PUBLISHING LTD | Published : 2019
Lanthanoid-doped Gallium Nitride (GaN) semiconductors are a promising class of materials with the potential to be used across a range of novel quantum optelectronic all-locations including room temperature single photon sources. However, to date there is relatively little understood about the properties of small lanthanoid ensembles, which is required before this class of materials can reach their full potential. This paper reports room temperature optical properties of submicron extent implanted-Praseodymium (Pr) in GaN. Thermal annealing at 1200 °C is conducted for the Pr implanted GaN using SiN cap technique to activate implanted-Pr as luminescent centers. The photoluminescence shows two ..View full abstract
Awarded by JSPS KAKENHI
Awarded by Australian Research Council
This work was supported by JSPS KAKENHI Grant Numbers JP16K17507 and JP18H01483, and the Australian Research Council, Grant Numbers CE140100003, LE140100131 and FT160100357. A part of this study was carried out within the framework of QST international research initiative "Quantum biosensors in wide-bandgap semiconductors". A part of this work was conducted at the AIST Nano-Processing Facility, supported by "Nanotechnology Platform Program" of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.