Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices
Stefanie B Tenberg, Serwan Asaad, Mateusz T Madzik, Mark A Johnson, Benjamin Joecker, Arne Laucht, Fay E Hudson, Kohei M Itoh, A Malwin Jakob, Brett C Johnson, David N Jamieson, Jeffrey C McCallum, Andrew S Dzurak, Robert Joynt, Andrea Morello
Physical Review B | AMER PHYSICAL SOC | Published : 2019
Awarded by Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology
Awarded by US Army Research Office
Awarded by Army Research Office (ARO)
We thank W. A. Coish and V. Premakumar for helpful discussion, and J. J. L. Morton for providing the bulk data point in Fig. 3. The research at UNSW and U. Melbourne was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Grants No. CE110001027 and No. CE170100012) and the US Army Research Office (Contracts No. W911NF-13-1-0024 and No. W911NF-17-1-0200). We acknowledge support from the Australian National Fabrication Facility (ANFF) and from the laboratory of R. Elliman at the Australian National University for the ion implantation facilities. K.M.I. acknowledges support from a Grant-in-Aid for Scientific Research by MEXT. The research of R. J. was sponsored by the Army Research Office (ARO) under Grants No. W911NF-17-1-0274 and No. W911NF-12-1-0607. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARO or the US Government. The US Government is authorized to reproduce and distribute reprints for government purposes notwithstanding any copyright notation herein.