Journal article

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Stefanie B Tenberg, Serwan Asaad, Mateusz T Madzik, Mark A Johnson, Benjamin Joecker, Arne Laucht, Fay E Hudson, Kohei M Itoh, A Malwin Jakob, Brett C Johnson, David N Jamieson, Jeffrey C McCallum, Andrew S Dzurak, Robert Joynt, Andrea Morello



We analyze the electron spin relaxation rate 1/T1 of individual ion-implanted P31 donors in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures (T≈100 mK) as a function of external magnetic field B0 and donor electrochemical potential μD. We observe a magnetic field dependence of the form 1/T1B05 for B03 T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in..

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Awarded by Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology

Awarded by US Army Research Office

Awarded by Army Research Office (ARO)

Funding Acknowledgements

We thank W. A. Coish and V. Premakumar for helpful discussion, and J. J. L. Morton for providing the bulk data point in Fig. 3. The research at UNSW and U. Melbourne was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Grants No. CE110001027 and No. CE170100012) and the US Army Research Office (Contracts No. W911NF-13-1-0024 and No. W911NF-17-1-0200). We acknowledge support from the Australian National Fabrication Facility (ANFF) and from the laboratory of R. Elliman at the Australian National University for the ion implantation facilities. K.M.I. acknowledges support from a Grant-in-Aid for Scientific Research by MEXT. The research of R. J. was sponsored by the Army Research Office (ARO) under Grants No. W911NF-17-1-0274 and No. W911NF-12-1-0607. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARO or the US Government. The US Government is authorized to reproduce and distribute reprints for government purposes notwithstanding any copyright notation herein.