Journal article

Activation and electron spin resonance of near-surface implanted bismuth donors in silicon

D Holmes, WIL Lawrie, BC Johnson, A Asadpoordarvish, JC McCallum, DR McCamey, DN Jamieson

PHYSICAL REVIEW MATERIALS | AMER PHYSICAL SOC | Published : 2019

Abstract

The bismuth (Bi) substitutional donor in silicon (Si) is an attractive qubit candidate for quantum computing proposals due to its large Hilbert space, clock transitions, and potential to couple to superconducting flux qubits. Single-qubit control, coupling, and readout by surface nanocircuitry requires a Bi depth of ∼20 nm in Si. This can be achieved using ion implantation of ∼25 keV Bi. This work explores the activation properties of Bi implanted at 26 keV with fluences of 1×1014 and 6×1012cm-2 into both crystalline and preamorphized Si. The Bi electrical activation yield was measured over a broad range of annealing conditions using resistivity and Hall effect measurements, enabling optimal..

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Grants

Awarded by Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology


Awarded by Australian Research Council Centre of Excellence in Exciton Science


Awarded by International Atomic Energy Agency through the Cooperative Research Program


Funding Acknowledgements

This research was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (CE170100012) and the Australian Research Council Centre of Excellence in Exciton Science (Grant No. CE170100026). We acknowledge the AFAiiR node of the NCRIS Heavy Ion Capability for access to ion-implantation facilities and the support of the International Atomic Energy Agency through the Cooperative Research Program No. F11020 "Ion beam induced spatio-temporal structural evolution of materials: Accelerators for a new technology era."