Journal article

Optically Active Defects at the SiC/SiO2 Interface

BC Johnson, J Woerle, D Haasmann, CT-K Lew, RA Parker, H Knowles, B Pingault, M Atature, A Gali, S Dimitrijev, M Camarda, JC McCallum

Physical Review Applied | AMER PHYSICAL SOC | Published : 2019

Abstract

The SiC/SiO2 interface is a central component of many SiC electronic devices. Defects intrinsic to this interface can have a profound effect on their operation and reliability. It is therefore crucial to both understand the nature of these defects and develop characterization methods to enable optimized SiC-based devices. Here we make use of confocal microscopy to address single SiC/SiO2-related defects and show the technique to be a noncontact, nondestructive, spatially resolved and rapid means of assessing thequality of the SiC/SiO2 interface. This is achieved by a systematic investigation of the defect density of the SiC/SiO2 interface by varying the parameters of a nitric oxide passivati..

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Grants

Awarded by Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology


Awarded by National Research Development and Innovation Office of Hungary


Awarded by Quantum Technology National Excellence Program


Funding Acknowledgements

This research was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Grant No. CE170100012). A.G. is supported by the National Research Development and Innovation Office of Hungary (Grant No. 127902) and the Quantum Technology National Excellence Program (Project No. 2017-1.2.1-NKP-2017-00001).