A Raman spectroscopy study of MBE-grown Hg1−xCdxSe alloys grown on GaSb (2 1 1) by molecular beam epitaxy

Abstract

This work presents a Raman spectroscopy study of Hg1−xCdxSe alloys grown on GaSb (2 1 1) substrates by molecular beam epitaxy. For the Raman spectra of Hg1−xCdxSe (0 ≤ x ≤ 0.6) measured with low laser excitation intensity, no sample damage is observed and the Raman spectra are dominated by the HgSe-like phonon modes. However, with a higher laser excitation intensity, material damage in the form of void formation is observed due to Hg loss and the resultant Raman spectra are dominated by CdSe-like phonon modes. For a constant laser excitation intensity the material damage was found to increase with increasing Cd content due to weakening of the Hg-Se bond in the presence of Cd. A separate Rama..