Journal article

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

LH Willems van Beveren, DL Creedon, N Eikenberg, K Ganesan, BC Johnson, G Chimowa, D Churochkin, S Bhattacharyya, S Prawer



We present a study of the structural and electronic properties of ultrananocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapor deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of three-dimensional weak localization (3DWL) and thermally activated hopping at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence ..

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Awarded by Ministry of Science and Higher Education of the Russian Federation

Funding Acknowledgements

This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF). The authors would like to acknowledge A.R. Hamilton for fruitful discussions and S. Rubanov and K. Fox for assisting with the material characterization. S.B. also acknowledges financial support from the Ministry of Science and Higher Education of the Russian Federation in the framework of the Competitiveness Enhancement Program of NUST (MISIS) (Grant No. K3-2018-043).