Journal article

Hydrogen-Assisted Defect Engineering of Doped Poly-Si Films for Passivating Contact Solar Cells

TN Truong, D Yan, C Samundsett, A Liu, SP Harvey, M Young, Z Ding, M Tebyetekerwa, F Kremer, M Al-Jassim, A Cuevas, D MacDonald, HT Nguyen

ACS Applied Energy Materials | American Chemical Society | Published : 2019

Abstract

Hydrogen-assisted defect engineering, via a hydrogenated silicon nitride (SiNx:H) capping layer, on doped polycrystalline silicon (poly-Si) passivating-contact structures, is explored using complementary techniques. The hydrogen treatment universally improves the passivation quality of poly-Si/SiOx stacks on all samples investigated. Meanwhile, their contact resistivity remains very low at ∼6 mω·cm2. Moreover, the nature of charge carrier recombination within the poly-Si films is also investigated by means of photoluminescence. On planar c-Si substrates, the poly-Si films emit two broad photoluminescence peaks at ∼850-1050 and ∼1300-1500 nm. The former is the characteristic peak of the hydro..

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