Journal article

Influence of PECVD deposition temperature on phosphorus doped poly-silicon passivating contacts

W Chen, TN Truong, HT Nguyen, C Samundsett, SP Phang, D MacDonald, A Cuevas, L Zhou, Y Wan, D Yan

Solar Energy Materials and Solar Cells | Elsevier | Published : 2020


This paper describes the influence of plasma enhanced chemical vapor deposition (PECVD) deposition temperature on heavily doped silicon based (doped-Si/SiOx) passivating contacts for silicon solar cells. The doped-Si films are obtained by PECVD intrinsic amorphous silicon (a-Si) and a subsequent thermal POCl3 diffusion process. By changing the deposition temperature of PECVD, a-Si films with different degrees of crystallinity and density can be obtained. These differences between the a-Si films result in different properties of the passivating contacts in terms of passivation quality and carrier selectivity. By exploring a range of PECVD deposition temperatures from 250 °C to 470 °C, the bes..

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