Contactless, nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature.
Hieu T Nguyen, Zhuofeng Li, Young-Joon Han, Rabin Basnet, Mike Tebyetekerwa, Thien N Truong, Huiting Wu, Di Yan, Daniel Macdonald
Scientific Reports | Nature Publishing Group | Published : 2019
We develop a photoluminescence-based technique to determine dopant profiles of localized boron-diffused regions in silicon wafers and solar cell precursors employing two excitation wavelengths. The technique utilizes a strong dependence of room-temperature photoluminescence spectra on dopant profiles of diffused layers, courtesy of bandgap narrowing effects in heavily-doped silicon, and different penetration depths of the two excitation wavelengths in silicon. It is fast, contactless, and nondestructive. The measurements are performed at room temperature with micron-scale spatial resolution. We apply the technique to reconstruct dopant profiles of a large-area (1 cm × 1 cm) boron-diffused sa..View full abstract