Journal article

Determination of Dopant Density Profiles of Heavily Boron-Doped Silicon from Low Temperature Microphotoluminescence Spectroscopy

YJ Han, E Franklin, D MacDonald, HT Nguyen, D Yan

IEEE Journal of Photovoltaics | Published : 2017

Abstract

Low temperature microphotoluminescence spectroscopy (μ-PLS) is employed to determine the inhomogeneous doping profiles for heavily boron-doped regions on silicon wafers. Samples having various Gaussian function doping profiles, in terms of surface dopant density and depth factor, are prepared via two-step thermal boron diffusion on high resistivity n-type silicon wafers. Measured PL spectra are normalized to the Si band-band luminescence peak, and PL components of undiffused Si are subtracted to resolve the doping peak. We show that the wavelength of the doping peak has a reliable and simple linear relationship with the measured surface dopant density on a semilog plot, and so establish a ca..

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