Journal article

Scanned Single-Electron Probe inside a Silicon Electronic Device

Kevin SH Ng, Benoit Voisin, Brett C Johnson, Jeffrey C McCallum, Joe Salfi, Sven Rogge

ACS Nano | AMER CHEMICAL SOC | Published : 2020

Abstract

Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. Although it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here, we probe a silicon electronic device at the atomic scale using a localized electronic quantum dot induced directly within the device at a desired location, using the biased tip of a low-temperature scanning tunneling microscope. We demonstrate control over short-ranged tunnel coupling interactions of the quantum dot with the device's source reservo..

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Grants

Awarded by ARC Centre of Excellence for Quantum Computation and Communication Technology


Awarded by ARC


Awarded by ARC DECRA fellowship


Funding Acknowledgements

K.S.H.N. would like to acknowledge S. Loth for useful discussions. We acknowledge support from the ARC Centre of Excellence for Quantum Computation and Communication Technology (CE170100012) and an ARC Discovery Project (DP180102620). J.S. acknowledges financial support from an ARC DECRA fellowship (DE1601101490) and from the National Science and Engineering Research Council. B.C.J. and J.C.M. acknowledge the AFAiiR node of the NCRIS Heavy Ion Capability for access to ion-implantation facilities.