Auto-Oxidation of a Volatile Silicon Compound: A Theoretical Study of the Atmospheric Chemistry of Tetramethylsilane

Abstract

Volatile silicon compounds (VOSiCs) are air pollutants present in both indoor and outdoor environments. Here, tetramethylsilane (TMS) is selected as a model to study the photochemical oxidation mechanisms for VOSiCs using ab initio and RRKM theory / master equation kinetic modelling. Under tropospheric conditions the TMS radical (CH3)3SiCH2• reacts with O2 to produce a stabilized peroxyl radical which is expected to ultimately yield the alkoxyl radical (CH3)3SiCH2O•. At combustion-relevant temperatures, however, a well-skipping reaction to (CH3)3SiO• + HCHO dominates. Importantly, the (CH3)3SiCH2O• radical is predicted to rearrange to (CH3)3SiOCH2• with a very low reaction barrier, enabling ..