Journal article

Auto-Oxidation of a Volatile Silicon Compound: A Theoretical Study of the Atmospheric Chemistry of Tetramethylsilane

Gabriel da Silva, Zhonghua Ren

American Chemical Society (ACS)

Abstract

Volatile silicon compounds (VOSiCs) are air pollutants present in both indoor and outdoor environments. Here, tetramethylsilane (TMS) is selected as a model to study the photochemical oxidation mechanisms for VOSiCs using ab initio and RRKM theory / master equation kinetic modelling. Under tropospheric conditions the TMS radical (CH3)3SiCH2• reacts with O2 to produce a stabilized peroxyl radical which is expected to ultimately yield the alkoxyl radical (CH3)3SiCH2O•. At combustion-relevant temperatures, however, a well-skipping reaction to (CH3)3SiO• + HCHO dominates. Importantly, the (CH3)3SiCH2O• radical is predicted to rearrange to (CH3)3SiOCH2• with a very low reaction barrier, enabling ..

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University of Melbourne Researchers