Journal article
Epitaxial Formation of SiC on (100) Diamond
Alexander Tsai, Alireza Aghajamali, Nikolai Dontschuk, Brett C Johnson, Muhammad Usman, Alex K Schenk, Michael Sear, Christopher I Pakes, Lloyd CL Hollenberg, Jeffrey C McCallum, Sergey Rubanov, Anton Tadich, Nigel A Marks, Alastair Stacey
ACS Applied Electronic Materials | American Chemical Society (ACS) | Published : 2020
Abstract
We demonstrate locally the coherent formation of silicon carbide (SiC) on diamond, a rare example of heteroepitaxy with a lattice mismatch that exceeds 20%. High-resolution transmission electron microscopy confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realizing heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high-power electronics. At a..
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Grants
Awarded by Australian Research Council
Funding Acknowledgements
This research was undertaken on the Soft X-ray Spectroscopy beamline at the Australian Synchrotron, part of ANSTO. This work was performed in part at the Melbourne Centre for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF). Additionally, TEM was conducted at the Bio21 Advanced Microscopy Facility (the University of Melbourne). Computational resources were also provided by the Pawsey Supercomputing Centre with funding from the Australian Government and the Government of Western Australia. This research was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (No. CE170100012). A.S. is the recipient of an Australian Research Council Discovery Early Career Award (DE190100336) funded by the Australian Government.