Journal article

Influence of PECVD Deposition Power and Pressure on Phosphorus-Doped Polysilicon Passivating Contacts

W Chen, J Stuckelberger, W Wang, SP Phang, D Kang, C Samundsett, D MacDonald, A Cuevas, L Zhou, Y Wan, D Yan

IEEE Journal of Photovoltaics | IEEE | Published : 2020

Abstract

Passivating contacts for silicon solar cells can be fabricated by depositing a layer of intrinsic amorphous silicon (a-Si) by the plasma-enhanced chemical vapor deposition (PECVD) onto an oxidized silicon wafer, followed by a thermal POCl3 diffusion process. This article describes the influence of the main PECVD parameters, power and pressure, on the electrical performance of such phosphorus-doped polysilicon (doped-Si/SiOx) passivating contacts. We characterize their properties in terms of the passivation quality and carrier selectivity for different PECVD powers and pressures. The deposition power settings from 350 to 800 W are tried, the highest iVoc value of 721 mV is achieved at a power..

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