Journal article
Single photon emission from plasma treated 2D hexagonal boron nitride
Zai-Quan Xu, Christopher Elbadawi, Trong Tran Toan, Mehran Kianinia, Xiuling Li, Daobin Liu, Timothy B Hoffman, Nguyen Minh, Sejeong Kim, James H Edgar, Xiaojun Wu, Li Song, Sajid Ali, Mike Ford, Milos Toth, Igor Aharonovich
Nanoscale | ROYAL SOC CHEMISTRY | Published : 2018
DOI: 10.1039/c7nr08222c
Abstract
Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from bl..
View full abstractGrants
Awarded by NSF
Awarded by Australian Research Council
Awarded by Asian Office of Aerospace Research and Development grant
Awarded by NSFC
Awarded by MOST
Awarded by Strategic Priority Research Program of CAS
Funding Acknowledgements
The authors thank Dr Luhua Li from Deakin University for the fruitful discussions. The hBN crystal growth at Kansas State University was supported by the NSF grant CMMI 1538127. Financial support from the Australian Research Council (via DP140102721, DP180100077), FEI Company, and the Asian Office of Aerospace Research and Development grant FA2386-15-1-4044 is gratefully acknowledged. The USTC group was supported by the NSFC (21573204, 21421063), the MOST (2016YFA0200602), the Strategic Priority Research Program of CAS (XDB01020300), and the USTC Supercomputer Centers. This research was supported in part by the Research Training Program (RTP) from the Australian government.