Journal article

Single photon emission from plasma treated 2D hexagonal boron nitride

Zai-Quan Xu, Christopher Elbadawi, Trong Tran Toan, Mehran Kianinia, Xiuling Li, Daobin Liu, Timothy B Hoffman, Nguyen Minh, Sejeong Kim, James H Edgar, Xiaojun Wu, Li Song, Sajid Ali, Mike Ford, Milos Toth, Igor Aharonovich

Nanoscale | ROYAL SOC CHEMISTRY | Published : 2018


Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from bl..

View full abstract


Awarded by NSF

Awarded by Australian Research Council

Awarded by Asian Office of Aerospace Research and Development grant

Awarded by NSFC

Awarded by MOST

Awarded by Strategic Priority Research Program of CAS

Funding Acknowledgements

The authors thank Dr Luhua Li from Deakin University for the fruitful discussions. The hBN crystal growth at Kansas State University was supported by the NSF grant CMMI 1538127. Financial support from the Australian Research Council (via DP140102721, DP180100077), FEI Company, and the Asian Office of Aerospace Research and Development grant FA2386-15-1-4044 is gratefully acknowledged. The USTC group was supported by the NSFC (21573204, 21421063), the MOST (2016YFA0200602), the Strategic Priority Research Program of CAS (XDB01020300), and the USTC Supercomputer Centers. This research was supported in part by the Research Training Program (RTP) from the Australian government.