Journal article

Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

Stefania Castelletto, Jovan Maksimovic, Tomas Katkus, Takeshi Ohshima, Brett C Johnson, Saulius Juodkazis

NANOMATERIALS | MDPI | Published : 2021


Color centers in silicon carbide are relevant for applications in quantum technologies as they can produce single photon sources or can be used as spin qubits and in quantum sensing applications. Here, we have applied femtosecond laser writing in silicon carbide and gallium nitride to generate vacancy-related color centers, giving rise to photoluminescence from the visible to the infrared. Using a 515 nm wavelength 230 fs pulsed laser, we produce large arrays of silicon vacancy defects in silicon carbide with a high localization within the confocal diffraction limit of 500 nm and with minimal material damage. The number of color centers formed exhibited power-law scaling with the laser fabri..

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University of Melbourne Researchers


Awarded by ARC


Funding Acknowledgements

S.J. acknowledges partial support by the ARC Linkage LP190100505 and Discovery DP190103284 grants. T.O. acknowledges partial support by JSPS KAKENHI 18H03770 and 20H00355.