Journal article
Isotopic enrichment of silicon by high fluence Si-28(-) ion implantation
D Holmes, BC Johnson, C Chua, B Voisin, S Kocsis, S Rubanov, SG Robson, JC McCallum, DR McCamey, S Rogge, DN Jamieson
PHYSICAL REVIEW MATERIALS | AMER PHYSICAL SOC | Published : 2021
Abstract
Spins in the "semiconductor vacuum"of silicon-28 (Si28) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate or epilayer of Si28 is required to limit the decoherence pathway caused by magnetic perturbations from surrounding Si29 nuclear spins (I=1/2), present in natural Si (Sinat) at an abundance of 4.67%. We isotopically enrich surface layers of Sinat by sputtering using high fluence 28Si- implantation. Phosphorus (P) donors implanted into one such Si28 layer with ∼3000 ppm Si29, produced by implanting 30 keV 28Si- ions at a fluence of 4×1018cm-2, were measured with pulsed electron spin resonance, confirming successful donor activation upon ann..
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Awarded by Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology
Awarded by International Atomic Energy Agency
Funding Acknowledgements
This research was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (CE170100012). We acknowledge the AFAiiR node of the NCRIS Heavy Ion Capability for access to ion-implantation facilities at EME, ANU, Silicon Quantum Computing for financial support, and access to the electron spin resonance infrastructure, the Surface Analysis Laboratory, SSEAU, MWAC, UNSW for SIMS, A. M. Jakob for useful discussions, and the support of the International Atomic Energy Agency through the Cooperative Research Program number F11020 "Ion beam induced spatiotemporal structural evolution of materials: Accelerators for a new technology era."