Journal article
Effect of atomic structure on the electrical response of aluminum oxide tunnel junctions
MJ Cyster, JS Smith, JA Vaitkus, N Vogt, SP Russo, JH Cole
PHYSICAL REVIEW RESEARCH | AMER PHYSICAL SOC | Published : 2020
Abstract
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit parameters in these junctions are affected by the uniformity, morphology, and composition of the oxide barriers. To improve these circuits the effect of the atomic structure on the electrical response of aluminium oxide barriers must be understood. We create three-dimensional atomistic models of aluminium oxide tunnel junctions and simulate their electronic transport properties with the nonequilibrium Green's function formalism. With this approach we are bett..
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Grants
Awarded by Australian Research Council
Funding Acknowledgements
The authors acknowledge support of the Australian Research Council through grants DP140100375, CE170100026 (MJC), and CE170100039 (JSS). The authors also acknowledge useful discussions with J. Gale. This research was undertaken with the assistance of resources from the National Computational Infrastructure (NCI), which is supported by the Australian Government. The authors acknowledge the people of the Woi wurrung and Boon wurrung language groups of the eastern Kulin Nations on whose unceded lands we work. We also acknowledge the Ngunnawal people, the Traditional Custodians of the Australian Capital Territory where NCI is located. We respectfully acknowledge the Traditional Custodians of the lands and waters across Australia and their Elders: past, present, and emerging.