Journal article
MOSFET dosimetry of an X-ray microbeam.
AB Rosenfeld, GI Kaplan, T Kron, BJ Allen, A Dilmanian, I Orion, B Ren, MLF Lerch, A Holmes-Siedle
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Published : 1999
DOI: 10.1109/23.819153
Abstract
A metal-oxide-semiconductor field effect transistor (MOSFET) has been used as a radiation monitor to map the profile of a variety of X-ray radiation microbeams. The present work studies the role of the topology of the MOSFET gate oxide when mapping radiation microbeams. The "edge-on" MOSFET has been introduced for microbeam mapping and the spatial resolution of the "edge-on" MOSFET is investigated. Comparison is made with other mapping techniques including, Gafchromic/sup TM/ film, radiographic film, ionization chamber. The results clearly demonstrate the superiority of the "edge-on" MOSFET when applied to mapping of narrow radiation beams. The spatial resolution of the "edge-on" MOSFET is e..
View full abstract