Journal article

Piezoresistance in Defect-Engineered Silicon

H Li, A Thayil, CTK Lew, M Filoche, BC Johnson, JC McCallum, S Arscott, ACH Rowe

PHYSICAL REVIEW APPLIED | AMER PHYSICAL SOC | Published : 2021

Abstract

The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-Through voltage (Vt) corresponding to the onset of a space-charge-limited hole current, the longitudinal â 110â

Grants

Awarded by French Agence Nationale de la Recherche


Awarded by Simons Foundation


Funding Acknowledgements

The authors acknowledge financial support from the French Agence Nationale de la Recherche (ANR-17-CE24-0005). M.F. and A.T. are funded by a grant from the Simons Foundation (601944, MF).