Optical Third-Harmonic Generation in Hexagonal Boron Nitride Thin Films
Anna A Popkova, Ilya M Antropov, Johannes E Froch, Sejeong Kim, Igor Aharonovich, Vladimir O Bessonov, Alexander S Solntsev, Andrey A Fedyanin
ACS PHOTONICS | AMER CHEMICAL SOC | Published : 2021
Hexagonal boron nitride (hBN) is a layered material that exhibits remarkable optical features in the UV, visible, and IR ranges, attractive for applications in modern photonics. Being transparent in a wide spectral range, hBN is now considered an important building block for novel integrated photonic platforms, thus requiring the study of its optical properties. In this work, we report on the measurements of hBN optical cubic nonlinearity χ(3) equal to 8.4 × 10-21 m2/V2 by observing the third-harmonic generation for 1080 nm pump wavelength from mechanically exfoliated hBN flakes with thicknesses varying from 5 to 170 nm. The third-order susceptibility of hBN is close to that of Si3N4 highlig..View full abstract
Awarded by Russian Ministry of Education and Science
Awarded by Russian Science Foundation
Awarded by Australian Research Council
Awarded by Foundation for the Advancement of Theoretical Physics and Mathematics "BASIS"
Awarded by Russian Foundation for Basic Research
Awarded by Asian Office of Aerospace Research and Development
The work was performed under financial support of the Russian Ministry of Education and Science (Grant No. 14.W03.31.0008), Russian Science Foundation (Grant No. 20-12-00371, nonlinear-optical measurements), Australian Research Council (DE180100070 and DP180100077), and the University of Technology Sydney (Seed Funding Grant). Part of the research was supported by MSU Quantum Technology Centre. A.A.P. acknowledges support by Foundation for the Advancement of Theoretical Physics and Mathematics "BASIS" (Grant No. 19-2-6-28-1). I.M.A. thanks Russian Foundation for Basic Research (Grant No. 19-0200876, solid-state sample characterization). I.A. gratefully acknowledges the Australian Research council (CE200100010) and the Asian Office of Aerospace Research and Development (FA2386-20-1-4014).