Reversible resistive switching behaviour CVD grown, large area MoOx

Fahmida Rahman; Taimur Ahmed; Sumeet Walia; Edwin Mayes; Sharath Sriram; Madhu Bhaskaran; Sivacarendran Balendhran

Journal article

Reversible resistive switching behaviour CVD grown, large area MoOx

Fahmida Rahman, Taimur Ahmed, Sumeet Walia, Edwin Mayes, Sharath Sriram, Madhu Bhaskaran, Sivacarendran Balendhran

NANOSCALE | ROYAL SOC CHEMISTRY | Published : 2018

DOI: 10.1039/c8nr04407d

Abstract

Non-volatile resistive memory devices are theorized to be the most promising pathway towards analog memory and neuromorphic computing. Two-dimensional MoO3 is a versatile planar transition metal oxide, whose properties can be readily tuned, making it anywhere from a wide bandgap semiconductor to a semi-metal. Successful integration of such a planar metal oxide into resistive memory can enable adaptive and low power memory applications. Here, we investigate the non-volatile and reversible resistive switching behaviour of oxygen deficient MoOx in a cross-point metal/insulator/metal (MIM) architecture. Layered MoOx films are synthesised using chemical vapour deposition (CVD) and reveal excellen..

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University of Melbourne Researchers

Shiva Balendhran Author

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ADVANCED IN-SITU ELECTRON MICROSCOPE FACILITY FOR RESEARCH IN ALLOYS, NANOMATERIALS, FUNCTIONAL MATERIALS, MAGNETIC MATERIALS AND MINERALS

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Grants

Awarded by Australian Research Council (ARC)

Funding Acknowledgements

The authors acknowledge support from the Australian Research Council (ARC) with project and personnel support through DE150100909 (SB), DE160100023 (MB), and DP140100170 (MB) and equipment funding through LE110100223 and LE150100001. The authors also acknowledge the facilities and technical assistance of the Micro Nano Research Facility and RMIT Microscopy and Microanalysis Facility.