Two-dimensional MoO3 via a top-down chemical thinning route

Abstract

Two-dimensional MoO is a versatile planar material, whose properties can be readily tuned, rendering it anywhere from a wide bandgap semiconductor to semi-metallic. This makes it a desirable candidate for a wide range of applications. However, to utilise its full potential, a repeatable process to produce high-quality two-dimensional (2D) crystals is yet to be reported. Here, we report a wet chemical etching process to controllably thin down bulk crystals of MoO . This process does not result in any structural or compositional changes, while retaining the desirable intrinsic electronic properties of the material. Field effect transistors based on post-etched crystals exhibit switching ratio..