Journal article

Engineering electrodeposited ZnO films and their memristive switching performance

Ahmad Sabirin Zoolfakar, Rosmalini Ab Kadir, Rozina Abdul Rani, Sivacarendran Balendhran, Xinjun Liu, Eugene Kats, Suresh K Bhargava, Madhu Bhaskaran, Sharath Sriram, Serge Zhuiykov, Anthony P O'Mullane, Kourosh Kalantar-zadeh

Physical Chemistry Chemical Physics | ROYAL SOC CHEMISTRY | Published : 2013

Abstract

We report the influence of zinc oxide (ZnO) seed layers on the performance of ZnO-based memristive devices fabricated using an electrodeposition approach. The memristive element is based on a sandwich structure using Ag and Pt electrodes. The ZnO seed layer is employed to tune the morphology of the electrodeposited ZnO films in order to increase the grain boundary density as well as construct highly ordered arrangements of grain boundaries. Additionally, the seed layer also assists in optimizing the concentration of oxygen vacancies in the films. The fabricated devices exhibit memristive switching behaviour with symmetrical and asymmetrical hysteresis loops in the absence and presence of ZnO..

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University of Melbourne Researchers