Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors
Hussein Nili, Sumeet Walia, Sivacarendran Balendhran, Dmitri B Strukov, Madhu Bhaskaran, Sharath Sriram
Advanced Functional Materials | WILEY-V C H VERLAG GMBH | Published : 2014
Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO : a- STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal-oxide-metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. a- STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (10 -10 ) switching ratios, good endurance (>10 I-V sweep cycles), and retention with less than 1% change in resistance over repeated 10 5 s long READ cycles. Na..View full abstract
Awarded by Australian Research Council
The authors acknowledge the Australian Research Council for funding in the form of project (DP130100062), fellowship (DP1092717 and DP110100262), and infrastructure (LE0882246, LE0989615, and LE110100223) support.