Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors

Abstract

Memristive devices are the precursors to high density nanoscale memories and the building blocks for neuromorphic computing. In this work, a unique room temperature synthesized perovskite oxide (amorphous SrTiO : a- STO) thin film platform with engineered oxygen deficiencies is shown to realize high performance and scalable metal-oxide-metal (MIM) memristive arrays demonstrating excellent uniformity of the key resistive switching parameters. a- STO memristors exhibit nonvolatile bipolar resistive switching with significantly high (10 -10 ) switching ratios, good endurance (>10 I-V sweep cycles), and retention with less than 1% change in resistance over repeated 10 5 s long READ cycles. Na..