Journal article
Recent progress in atomistic modelling and simulations of donor spin qubits in silicon
Muhammad Usman
COMPUTATIONAL MATERIALS SCIENCE | ELSEVIER | Published : 2021
Abstract
Electron or nuclear spins associated with dopant atoms, such as phosphorus impurities in silicon (Si:P), have been shown to form excellent qubits with promising potential for scale-up towards a fault-tolerant quantum computer architecture. The remarkable progress in the design and characterisation of Si:P qubits and quantum gates has been led by recent experimental demonstrations. Equally importantly, advances in theoretical modelling and simulations over a number of years have underpinned the experimental efforts through the fundamental understanding of dopant physics and by providing crucial interpretation of the experimental evidence. This brief review article provides highlights of our r..
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Awarded by ARC Center for Quantum Computation and Communication Technologies
Awarded by US Army Research Office
Funding Acknowledgements
The author is indebted to Lloyd Hollenberg and Charles Hill from the University of Melbourne for their strong support and contributions during all aspects of this work. The author thanks his student Yi Z. Wong who contributed in the development of machine learning framework. Many thanks to Juanita Bocquel, Joe Salfi, Benoit Voisin, Michelle Simmons and Sven Rogge from the University of New South Wales who led the experimental fabrication and STM measurements of donor qubits in silicon, and for many useful discussions. The work was supported by the ARC Center for Quantum Computation and Communication Technologies (CE170100012) and US Army Research Office (W911NF-08-1-0527). Computational resources are acknowledged from the National Computational Infrastructure (NCI) and Pawsey Supercomputing Center under the National Computational Merit based Allocation Scheme (NCMAS).