Journal article
Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators
Bin-Bin Xu, Gabriele G de Boo, Brett C Johnson, Milos Rancic, Alvaro Casas Bedoya, Blair Morrison, Jeffrey C McCallum, Benjamin J Eggleton, Matthew J Sellars, Chunming Yin, Sven Rogge
PHYSICAL REVIEW APPLIED | AMER PHYSICAL SOC | Published : 2021
Abstract
Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realize high-quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon microring cavity that can function at cryogenic temperatures. We verify that the shallow doping layer affects the local refractive index while inducing minimal losses with quality factors up to 105. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical ..
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Grants
Awarded by Australian Research Council Center of Excellence for Quantum Computation and Communication Technology
Funding Acknowledgements
We thank Dr. Haishu Li and Chunle Xiong for helpful discussions. This work was performed in part at the NSW node and the ACT node of the Australian National Fabrication Facility and at the University of Sydney nanoscience institute and the School of Physics at the University of Sydney. The facilities as well as the scientific and technical assistance of the Research & Prototype Foundry Core Research Facility at the University of Sydney are part of the Australian National Fabrication Facility. This research was funded by the Australian Research Council Center of Excellence for Quantum Computation and Communication Technology (Grant No. CE170100012) . We acknowledge the Australian Facility for Advanced Ion Implantation Research (AFAiiR) node of the National Collaborative Research Infrastructure Strategy (NCRIS) Heavy Ion Capability for access to ionimplantation facilities.