The Effect of Implanted Gallium on the Recrystallization of Amorphous Layers formed during FIB Milling of Silicon

Abstract

Abstract The focused ion beam (FIB) miller allows preparation of site-specific transmission electron microscopy (TEM) specimens from a wide range of materials in both cross-sectional and planar configurations [1,2]. However, radiation damage during exposure to the high-energy gallium beam may result in the formation of amorphous regions on thin film specimens. The thickness of such damage layers, on both sides of a TEM specimen, is comparable with the thickness required for lattice imaging. For example, the thickness of an amorphous layer in Si after 30 kV Ga+ FIB processing has been reported in the range from 15 [3] to 28 nm [4]. This problem limits the capabilities of FIB sa..