Book Chapter

Realization of Si1−x − yGexCy/Si heterostructures by pulsed laser induced epitaxy of C implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

J Boulmer, P Boucaud, C Guedj, D Débarre, D Bouchier, E Finkman, S Prawer, K Nugent, A Desmur-Larré, C Godet, P Roca i Cabarrocas

Selected Topics in Group IV and II–VI Semiconductors | Elsevier | Published : 1996

University of Melbourne Researchers