Low-Temperature Annealing of Radiation-Induced Degradation in 4H-SiC Bipolar Junction Transistors
Anders Hallen, Muhammad Nawaz, Carina Zaring, Muhammad Usman, Martin Domeij, Mikael Ostling
IEEE ELECTRON DEVICE LETTERS | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Published : 2010
Radiation hardness is tested for 4H-SiC n-p-n bipolar junction transistors designed for 1200-V breakdown voltage by implanting MeV protons and carbon ions at different doses and energies. The current gain is found to be a very sensitive parameter, and a fluence as low as 1×107cm -2 of 10 MeV 12C can be clearly detected in the forward-output characteristics, ICVCE. At this low dose, no influence of ion radiation is seen in the open-collector characteristics, IB(VEB), or the reverse bias leakage and breakdown properties. Moreover, by annealing the implanted devices at 420 °C for 30 min, a complete recovery of the electrical characteristics is accomplished. © 2010 IEEE.