Conference Proceedings

Correlating properties of PECVD SiNx layers to deposition parameters

K Vora, K Belay, DJ Pyke, F Karouta, C Jagadish

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD | Published : 2010

Abstract

We present a comprehensive study of the properties of SiNx layers deposited by PECVD correlating refractive index, mechanical stress, deposition rate, N/Si ratio, H-incorporation as function of the deposition parameters such SiH4 flow, RF power, LF/HF powers ratio and deposition temperature. © 2010 IEEE.

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