Journal article

Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals.

Mohammad B Ghasemian, Ali Zavabeti, Maedehsadat Mousavi, Billy J Murdoch, Andrew J Christofferson, Nastaran Meftahi, Jianbo Tang, Jialuo Han, Rouhollah Jalili, Francois-Marie Allioux, Mohannad Mayyas, Zibin Chen, Aaron Elbourne, Chris F McConville, Salvy P Russo, Simon Ringer, Kourosh Kalantar-Zadeh

Adv Mater | Wiley | Published : 2021


The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the preparation of doped 2D semiconducting sheets based on the different migration tendencies of metallic elements in the bulk competing for enriching the interfaces is proposed. As a model, liquid metal alloys with different weight ratios of Sn and Bi in the b..

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University of Melbourne Researchers


Awarded by Australian Research Council (ARC) Laureate Fellowship

Awarded by ARC Center of Excellence FLEET