Journal article
Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals
MB Ghasemian, A Zavabeti, M Mousavi, BJ Murdoch, AJ Christofferson, N Meftahi, J Tang, J Han, R Jalili, FM Allioux, M Mayyas, Z Chen, A Elbourne, CF McConville, SP Russo, S Ringer, K Kalantar-Zadeh
Advanced Materials | WILEY-V C H VERLAG GMBH | Published : 2021
Abstract
The introduction of trace impurities within the doping processes of semiconductors is still a technological challenge for the electronics industries. By taking advantage of the selective enrichment of liquid metal interfaces, and harvesting the doped metal oxide semiconductor layers, the complexity of the process can be mitigated and a high degree of control over the outcomes can be achieved. Here, a mechanism of natural filtering for the preparation of doped 2D semiconducting sheets based on the different migration tendencies of metallic elements in the bulk competing for enriching the interfaces is proposed. As a model, liquid metal alloys with different weight ratios of Sn and Bi in the b..
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Funding Acknowledgements
The authors would like to acknowledge the Australian Research Council (ARC) Laureate Fellowship grant (FL180100053) and ARC Center of Excellence FLEET (CE170100039) for the financial coverage of this work. The authors also acknowledge the facilities and the scientific and technical assistance of Microscopy Australia at the Electron Microscope Unit (EMU) within the Mark Wainwright Analytical Centre (MWAC) at UNSW Sydney, and Sydney Microscopy & Microanalysis, the University of Sydney node of Microscopy Australia. This research was undertaken with the assistance of supercomputing resources from the National Computational Infrastructure (NCI), which is supported by the Australian Government, under the National Computational Merit Allocation Scheme (project kl59).