Journal article

Visible to Short-Wave Infrared Photodetectors Based on ZrGeTe4 van der Waals Materials

Wei Yan, Brett C Johnson, Sivacarendran Balendhran, Jasper Cadusch, Di Yan, Jesus Ibarra Michel, Shifan Wang, Tian Zheng, Kenneth Crozier, James Bullock

ACS APPLIED MATERIALS & INTERFACES | AMER CHEMICAL SOC | Published : 2021

Abstract

The self-terminated, layered structure of van der Waals materials introduces fundamental advantages for infrared (IR) optoelectronic devices. These are mainly associated with the potential for low noise while maintaining high internal quantum efficiency when reducing IR absorber thicknesses. In this study, we introduce a new van der Waals material candidate, zirconium germanium telluride (ZrGeTe4), to a growing family of promising IR van der Waals materials. We find the bulk form ZrGeTe4 has an indirect band edge around ∼0.5 eV, in close agreement with previous theoretical predictions. This material is found to be stable up to 140 °C and shows minimal compositional variation even after >30 d..

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Grants

Awarded by Defense Advanced Research Projects Agency


Awarded by Australian Research Council


Awarded by Australian Research Council Center of Excellence for Quantum Computation and Communication Technology


Funding Acknowledgements

This work was supported by the Defense Advanced Research Projects Agency (HR0011-16-1-0004) and by the Australian Research Council (DP180104141 and DP210103428). B.C.J. acknowledges the Australian Research Council Center of Excellence for Quantum Computation and Communication Technology (No. CE170100012). The work was performed in part at the Melbourne Center for Nanofabrication (MCN) in the Victorian Node of the Australian National Fabrication Facility (ANFF) and at the Melbourne Characterization and Fabrication Platform (MCFP).