Journal article
Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper-Bound to 99.85% by Ion–Solid Interactions
AM Jakob, SG Robson, V Schmitt, V Mourik, M Posselt, D Spemann, BC Johnson, HR Firgau, E Mayes, JC McCallum, A Morello, DN Jamieson
Advanced Materials | Published : 2022
Abstract
Silicon chips containing arrays of single dopant atoms can be the material of choice for classical and quantum devices that exploit single donor spins. For example, group-V donors implanted in isotopically purified 28Si crystals are attractive for large-scale quantum computers. Useful attributes include long nuclear and electron spin lifetimes of 31P, hyperfine clock transitions in 209Bi or electrically controllable 123Sb nuclear spins. Promising architectures require the ability to fabricate arrays of individual near-surface dopant atoms with high yield. Here, an on-chip detector electrode system with 70 eV root-mean-square noise (≈20 electrons) is employed to demonstrate near-room-temperat..
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Grants
Awarded by Army Research Office
Funding Acknowledgements
y The authors thank F. E. Hudson and A. S. Dzurak for discussions and support in the establishment of this research project. The research at the University of Melbourne and UNSW was funded by the Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology (Grant No. CE170100012) and the US Army Research Office (Contract No. W911NF-17-1-0200). The authors acknowledge a grant from the University of Melbourne Research and Infrastructure Fund (RIF) and use of the facilities of the Australian National Fabrication Facility (ANFF) at the Melbourne Centre for Nanofabrication (MCN) and at UNSW. S.G.R. and H.R.F. acknowledge the support of an Australian Government Research Training Program Scholarship. A.M.J. acknowledges an Australia-Germany Joint Research Cooperation Scheme (UA-DAAD) travel scholarship that supported collaboration with partner institutions in Germany. The authors are grateful to D. McCulloch of the RMIT Microscopy and Microanalysis Facility for use of SEM/FIB and TEM equipment. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARO or the US Government. The US Government is authorized to reproduce and distribute reprints for government purposes notwithstanding any copyright notation herein.