Journal article
Nonvolatile Resistive Switching in Layered InSe via Electrochemical Cation Diffusion
A Mazumder, T Ahmed, E Mayes, SA Tawfik, SP Russo, MX Low, A Ranjan, S Balendhran, S Walia
Advanced Electronic Materials | Published : 2022
Abstract
2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide (InSe), a 2D metal monochalcogenide, is investigated to demonstrate a nonvolatile switching device. Detailed microscopic characterization supported with density functional theory calculations reveals cationic filamentary-based nonvolatile switching mechanism of γ-InSe in a crossplanar architecture. This is electrically driven by diffusion of Ag ions through the layered InSe stack. The InSe-based memory cells exhibit a switching ratio of ≈103 and..
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Grants
Awarded by Australian Research Council
Funding Acknowledgements
A.M. and T.A. contributed equally to this work. This work was performed in MNRF facility in RMIT University in the Victorian Node of the Australian National Fabrication Facility (ANFF) and the RMIT Microscopy and Microanalysis Research Facility (RMMF). S.P.R. acknowledges the support of the Australian Government through the Australian Research Council (ARC) under the Centre of Excellence scheme (project number CE170100026). This work was also supported by computational resources provided by the Australian Government through the National Computational Infrastructure National Facility.