Gap-Surface Plasmon-Enhanced Photoluminescence of InSe

Abstract

2D materials, with distinct characteristics compared to their conventional bulk counterparts, have been a popular topic in various optoelectronic research fields. Herein, indium selenide (InSe), a monochalcogenide van der Waals layered semiconductor, which has been studied due to its thickness dependent optical characteristics is explored. For InSe to be used as a versatile light source, enhancing the emission of InSe is required. Here, enhanced photoluminescence (PL) from multi-layer InSe is demonstrated using a gap plasmon induced between Ag nanocube dimer and an Au substrate. Such plasmonic structures support multiple resonances, one of those overlapping with InSe's band edge PL emission...