Journal article
2-nm-Thick Indium Oxide Featuring High Mobility
CK Nguyen, A Mazumder, ELH Mayes, V Krishnamurthi, A Zavabeti, BJ Murdoch, X Guo, P Aukarasereenont, A Dubey, A Jannat, X Wei, VK Truong, L Bao, A Roberts, CF McConville, S Walia, N Syed, T Daeneke
Advanced Materials Interfaces | WILEY | Published : 2023
Abstract
Thin film transistors (TFTs) are key components for the fabrication of electronic and optoelectronic devices, resulting in a push for the wider exploration of semiconducting materials and cost-effective synthesis processes. In this report, a simple approach is proposed to achieve 2-nm-thick indium oxide nanosheets from liquid metal surfaces by employing a squeeze printing technique and thermal annealing at 250 °C in air. The resulting materials exhibit a high degree of transparency (>99 %) and an excellent electron mobility of ≈96 cm2 V−1 s−1, surpassing that of pristine printed 2D In2O3 and many other reported 2D semiconductors. UV-detectors based on annealed 2D In2O3 also benefit from this..
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Grants
Awarded by Australian Research Council
Funding Acknowledgements
The authors would also like to thank the RMIT Microscopy and Microanalysis Facility (RMMF) and the Micro Nano Research Facility (MNRF). N.S. recognizes the support of a McKenzie Postdoctoral Fellowship from the University of Melbourne. T.D., C.K.N., and P.A. acknowledge funding received from the Australian Research Council's (ARC) DECRA program (DE190100100). T.D. also acknowledges funding received from the ARC via the discovery program (DP220101923) and centre of excellence program (CE170100039). S.W. acknowledges funding support via ARC DP220100020. L.B. and X.T.W. acknowledge funding supports from ARC DECRA program (DE190101514).