Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices

Mohammad Taha; Sumeet Walia; Taimur Ahmed; Daniel Headland; Withawat Withayachumnankul; Sharath Sriram; Madhu Bhaskaran

Journal article

Insulator-metal transition in substrate-independent VO2 thin film for phase-change devices

Mohammad Taha, Sumeet Walia, Taimur Ahmed, Daniel Headland, Withawat Withayachumnankul, Sharath Sriram, Madhu Bhaskaran

Scientific Reports | Nature Portfolio | Published : 2017

DOI: 10.1038/s41598-017-17937-3

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Abstract

Vanadium has 11 oxide phases, with the binary VO2 presenting stimuli-dependent phase transitions that manifest as switchable electronic and optical features. An elevated temperature induces an insulator–to–metal transition (IMT) as the crystal reorients from a monoclinic state (insulator) to a tetragonal arrangement (metallic). This transition is accompanied by a simultaneous change in optical properties making VO2 a versatile optoelectronic material. However, its deployment in scalable devices suffers because of the requirement of specialised substrates to retain the functionality of the material. Sensitivity to oxygen concentration and larger-scale VO2 synthesis have also been standing iss..

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University of Melbourne Researchers

Mohammad Taha Author

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Funding Acknowledgements

The authors acknowledge support from the Australian Research Council (ARC) for personnel and project support via DE160100023 (M.B.), DP170101922 (W.W., M.B.), DP130100062 (S.S.), and equipment funding through LE0882246, LE0989615, LE110100223, and LE150100001. Partial support was received through a Victoria Fellowship (M.B.) and a RMIT Foundation Malcolm Moore Award (S.W.). The authors also acknowledge the facilities and technical assistance of the Micro Nano Research Facility (MNRF) and the RMIT Microscopy and Microanalysis Research Facility (RMMF).