Ex-situ doping of polysilicon hole contacts for silicon solar cells via electron-beam boron evaporation

Abstract

In this study, a novel method for doping of p+ polysilicon (poly-Si)/SiOx passivated contacts is demonstrated. This is achieved by using a thin (∼3 nm) boron layer, deposited by electron beam evaporation, as a dopant source on top of an intrinsic poly-Si layer, which allows diffusion of boron into the structure at temperatures above 900 °C. Surface passivation, exemplified by the implied open circuit voltage (iVoc), and contact resistance, represented by the specific contact resistivity (ρc), were studied as a function of activation parameters including the drive-in temperature/time. By optimising the activation condition, doping layer thickness, and hydrogenation process, an iVoc of 709 mV ..