Million-Atom Wave Function Simulations of a Single Donor Qubit Made in Silicon Utilizing Ion Implantation Technology

Abstract

A large-scale quantum computer promises quantum algorithms with an exponential speed increase over classical counterparts. Ion implanted donor atom qubits in isotopically enriched (Formula presented.) have demonstrated leading coherence times and gate fidelities. Large-scale donor architectures must be tolerant to positional uncertainties owing to ion straggling consistent with the implant energy required to place near surface donor atoms allowing manipulation by surface control electrodes. These issues are addressed with a 40 million silicon atom quantum model based on the atomistic tight-binding technique in the context of the flip-flop qubit architecture. The donor electron wavefunction o..