Journal article
Efficient and Robust p-Type Transistor Based on Ultrawide-Bandgap Semiconductor
K Xing, Z Yang, W Zhao, Y Yin, H Han, S Wang, S Wang, J Bullock, A Stacey, JA Belcourt, S Rubanov, H Yin, DA Broadway, JP Tetienne, X Yin, L Wu, DC Qi, MS Fuhrer, Q Ou, X Renshaw Wang
ACS Nano | Published : 2026
Abstract
The p-type transistor is an indispensable component of semiconductor technology, enabling a complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to the limited semiconductors with reliable hole transport and their high activation energies. Here, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultrawide-bandgap semiconductor and a high-κ dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined wi..
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Grants
Awarded by National Research Foundation Singapore