Collapse of nanocavities studied by ion-channeling and Raman spectroscopy

Abstract

It has previously been shown that nanocavities collapse during amorphisation of the surrounding crystal Si (c-Si) lattice. In this experiment, the sensitivity of Rutherford backscattering and ion-channeling (RBS-C) to this collapse has been examined. Ion implantation damage was introduced into c-Si around a band of nanocavities ∼2850 Å below the surface using various doses and temperatures. The dechanneled component of RBS-C spectra were extracted using a computer program based on the work of Ziegler. The wafers were also studied by Raman spectroscopy and compared to samples without nanocavities that had undergone the same implantation treatment. © 2002 Elsevier Science B.V. All rights reser..