Journal article
Electron exchange coupling for single-donor solid-state spin qubits
J Wellard, L Hollenberg, F Parisoli, L McIntosh, N Jamieson, M Kettle, HS Goan
Physical Review B Condensed Matter and Materials Physics | AMER PHYSICAL SOC | Published : 2003
Abstract
Intervalley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighboring phosphorus donor electron states in silicon [B. Koiller, X. Hu, and S. Das Sarma, Phys. Rev. Lett. 88, 027903 (2002); Phys. Rev. B 66, 115201 (2002)]. These same effects lead to an extreme sensitivity of the exchange energy on the relative orientation of the donor atoms, an issue of crucial importance in the construction of silicon-based spin quantum computers. In this article we calculate the donor electron exchange coupling as a function of donor position incorporating the full Bloch structure of the Kohn-Luttinger electron wave functions. It ..
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