Kinetics of arsenic-enhanced solid phase epitaxy in silicon
BC Johnson, JC McCallum
JOURNAL OF APPLIED PHYSICS | AMER INST PHYSICS | Published : 2004
The kinetics of intrinsic and arsenic-enhanced solid phase epitaxy (SPE) was analyzed in buried amorphous Si (a-Si) layers. Time-resolved reflectivity (TRR) was used to measure the SPE rate through the As concentration profile and its intrinsic counterpart. By a comparison between the buried and surface a-Si layers, the effects of hydrogen on the SPE rate was determined. It was found that the As-enhanced SPE rate versus depth curve is offset with respect to the concentration profile, for the surface a-Si layers.